{"id":1267,"date":"2021-02-26T16:50:14","date_gmt":"2021-02-26T21:50:14","guid":{"rendered":"https:\/\/demo.irdq.ca\/project\/les-defis-de-la-fabrication-de-structures-infiniment-petites\/"},"modified":"2021-03-23T17:15:27","modified_gmt":"2021-03-23T21:15:27","slug":"the-challenges-of-fabricating-infinitely-small-structures","status":"publish","type":"project","link":"https:\/\/demo.irdq.ca\/en\/project\/the-challenges-of-fabricating-infinitely-small-structures\/","title":{"rendered":"THE CHALLENGES OF FABRICATING INFINITELY SMALL STRUCTURES"},"content":{"rendered":"

+PRECISE +SMALL +EFFICIENT<\/h3>\n

Since the invention of the first microprocessor in 1971, the relentless reduction of the limits of device fabrication, from 3 microns in 1980 to 32 nanometres today, has given rise to a constant evolution of microelectronics, which should continue until it reaches a fast-approaching physical \u201cwall\u201d: the atom. In fact, 32 nanometres represent only one hundred or so atoms placed side by side: the challenge lies in producing structures with a resolution of only a few atoms over large surfaces, and at a lower cost.<\/p>\n

The production of structures this size is based on two major steps: the definition of motifs in resist and their transfer to the material. To push back the limits of these steps, the Vistec VB6 UHR-EWF \u2014 one of the world\u2019s most efficient electronic lithography tools \u2014 is put to effective use.\u00a0 Couples to plasma etching tools at the cutting edge of technology, motifs approximately 10 nm wide (i.e. about thirty atoms) etched to a depth of 120 nm were produced on Si and SiO2, the smallest sizes ever achieved.<\/p>\n

RESEARCHERS<\/h3>\n

S. Delprat, B. Le Drogoff and Prof. M. Chaker (INRS)<\/p>\n

IRDQ’S CONTRIBUTION<\/h3>\n