{"id":1261,"date":"2021-02-26T16:51:05","date_gmt":"2021-02-26T21:51:05","guid":{"rendered":"https:\/\/demo.irdq.ca\/project\/des-points-quantiques-de-silicium-pour-les-memoires-electroniques\/"},"modified":"2021-03-25T17:38:25","modified_gmt":"2021-03-25T21:38:25","slug":"silicon-quantum-dots-for-electronic-memories","status":"publish","type":"project","link":"https:\/\/demo.irdq.ca\/en\/project\/silicon-quantum-dots-for-electronic-memories\/","title":{"rendered":"SILICON QUANTUM DOTS FOR ELECTRONIC MEMORIES"},"content":{"rendered":"<h3>+EFFICIENT +SMALL +INTEGRATED<\/h3>\n<p>Memory cards and other USB keys are an integral part of our daily lives. Professor Drouin&#8217;s approach could revolutionize their design.<\/p>\n<p>Arrays of holes infinitely small in a layer of silicon nitride were obtained by combining e-beam lithography and plasma etching. Next, a short pulse of electrochemical current allows the formation of one silicon nanocrystal per hole. This results in a high-quality crystal array with a reproducible morphology, making it addressable in a real storage system.<\/p>\n<h3>REFERENCE<\/h3>\n<p>[1] A. Ayari-Kanoun, A. Jaouad, A. Souifi, D. Drouin, J. Beauvais, Journal of Vacuum Science &amp; Technology B, 29 (5), 051802 (2011)<\/p>\n<h3>RESEARCHERS<\/h3>\n<p>Pr. D. Drouin and Pr. J. Beauvais (Universit\u00e9 de Sherbrooke), Pr. A Souifi (INSA Lyon)<\/p>\n<h3>IRDQ CONTRIBUTION<\/h3>\n<ul>\n<li><a href=\"https:\/\/demo.irdq.ca\/en\/tag-product\/ebeam-lithography\/\">ebeam lithography<\/a><\/li>\n<li><a href=\"https:\/\/demo.irdq.ca\/en\/tag-product\/inductively-coupled-plasma-reactive-ion-etching-icp-rie\/\">Inductively coupled plasma reactive ion etching (ICP-RIE)<\/a><\/li>\n<\/ul>\n","protected":false},"excerpt":{"rendered":"<p>+EFFICIENT +SMALL +INTEGRATED Memory cards and other USB keys are an integral part of our daily lives. Professor Drouin&#8217;s approach could revolutionize their design. Arrays of holes infinitely small in a layer of silicon nitride were obtained by combining e-beam lithography and plasma etching. Next, a short pulse of electrochemical current allows the formation of [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":1262,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_et_pb_use_builder":"","_et_pb_old_content":"","_et_gb_content_width":""},"project_category":[656,654],"project_tag":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v23.5 - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>SILICON QUANTUM DOTS FOR ELECTRONIC MEMORIES | IRDQ<\/title>\n<meta name=\"robots\" content=\"noindex, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"SILICON QUANTUM DOTS FOR ELECTRONIC MEMORIES | IRDQ\" \/>\n<meta property=\"og:description\" content=\"+EFFICIENT +SMALL +INTEGRATED Memory cards and other USB keys are an integral part of our daily lives. Professor Drouin&#8217;s approach could revolutionize their design. Arrays of holes infinitely small in a layer of silicon nitride were obtained by combining e-beam lithography and plasma etching. Next, a short pulse of electrochemical current allows the formation of [&hellip;]\" \/>\n<meta property=\"og:url\" content=\"https:\/\/demo.irdq.ca\/project\/des-points-quantiques-de-silicium-pour-les-memoires-electroniques\/\" \/>\n<meta property=\"og:site_name\" content=\"IRDQ\" \/>\n<meta property=\"article:modified_time\" content=\"2021-03-25T21:38:25+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/demo.irdq.ca\/wp-content\/uploads\/2021\/02\/nanocristal.si_.drouin_cwz.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"521\" \/>\n\t<meta property=\"og:image:height\" content=\"557\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data1\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"WebPage\",\"@id\":\"https:\/\/demo.irdq.ca\/project\/des-points-quantiques-de-silicium-pour-les-memoires-electroniques\/\",\"url\":\"https:\/\/demo.irdq.ca\/project\/des-points-quantiques-de-silicium-pour-les-memoires-electroniques\/\",\"name\":\"SILICON QUANTUM DOTS FOR ELECTRONIC MEMORIES | IRDQ\",\"isPartOf\":{\"@id\":\"https:\/\/demo.irdq.ca\/#website\"},\"primaryImageOfPage\":{\"@id\":\"https:\/\/demo.irdq.ca\/project\/des-points-quantiques-de-silicium-pour-les-memoires-electroniques\/#primaryimage\"},\"image\":{\"@id\":\"https:\/\/demo.irdq.ca\/project\/des-points-quantiques-de-silicium-pour-les-memoires-electroniques\/#primaryimage\"},\"thumbnailUrl\":\"https:\/\/demo.irdq.ca\/wp-content\/uploads\/2021\/02\/nanocristal.si_.drouin_cwz.jpg\",\"datePublished\":\"2021-02-26T21:51:05+00:00\",\"dateModified\":\"2021-03-25T21:38:25+00:00\",\"breadcrumb\":{\"@id\":\"https:\/\/demo.irdq.ca\/project\/des-points-quantiques-de-silicium-pour-les-memoires-electroniques\/#breadcrumb\"},\"inLanguage\":\"en-US\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/demo.irdq.ca\/project\/des-points-quantiques-de-silicium-pour-les-memoires-electroniques\/\"]}]},{\"@type\":\"ImageObject\",\"inLanguage\":\"en-US\",\"@id\":\"https:\/\/demo.irdq.ca\/project\/des-points-quantiques-de-silicium-pour-les-memoires-electroniques\/#primaryimage\",\"url\":\"https:\/\/demo.irdq.ca\/wp-content\/uploads\/2021\/02\/nanocristal.si_.drouin_cwz.jpg\",\"contentUrl\":\"https:\/\/demo.irdq.ca\/wp-content\/uploads\/2021\/02\/nanocristal.si_.drouin_cwz.jpg\",\"width\":521,\"height\":557},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/demo.irdq.ca\/project\/des-points-quantiques-de-silicium-pour-les-memoires-electroniques\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Accueil\",\"item\":\"https:\/\/demo.irdq.ca\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"Projets\",\"item\":\"https:\/\/demo.irdq.ca\/project\/\"},{\"@type\":\"ListItem\",\"position\":3,\"name\":\"SILICON QUANTUM DOTS FOR ELECTRONIC MEMORIES\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/demo.irdq.ca\/#website\",\"url\":\"https:\/\/demo.irdq.ca\/\",\"name\":\"IRDQ\",\"description\":\"Infrastructure en recherche et d\u00e9veloppement du Qu\u00e9bec\",\"publisher\":{\"@id\":\"https:\/\/demo.irdq.ca\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/demo.irdq.ca\/?s={search_term_string}\"},\"query-input\":{\"@type\":\"PropertyValueSpecification\",\"valueRequired\":true,\"valueName\":\"search_term_string\"}}],\"inLanguage\":\"en-US\"},{\"@type\":\"Organization\",\"@id\":\"https:\/\/demo.irdq.ca\/#organization\",\"name\":\"IRDQ\",\"url\":\"https:\/\/demo.irdq.ca\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"en-US\",\"@id\":\"https:\/\/demo.irdq.ca\/#\/schema\/logo\/image\/\",\"url\":\"https:\/\/demo.irdq.ca\/wp-content\/uploads\/2021\/02\/irdq-logo-vertical.png\",\"contentUrl\":\"https:\/\/demo.irdq.ca\/wp-content\/uploads\/2021\/02\/irdq-logo-vertical.png\",\"width\":1705,\"height\":683,\"caption\":\"IRDQ\"},\"image\":{\"@id\":\"https:\/\/demo.irdq.ca\/#\/schema\/logo\/image\/\"}}]}<\/script>\n<!-- \/ Yoast SEO plugin. -->","yoast_head_json":{"title":"SILICON QUANTUM DOTS FOR ELECTRONIC MEMORIES | IRDQ","robots":{"index":"noindex","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"og_locale":"en_US","og_type":"article","og_title":"SILICON QUANTUM DOTS FOR ELECTRONIC MEMORIES | IRDQ","og_description":"+EFFICIENT +SMALL +INTEGRATED Memory cards and other USB keys are an integral part of our daily lives. Professor Drouin&#8217;s approach could revolutionize their design. Arrays of holes infinitely small in a layer of silicon nitride were obtained by combining e-beam lithography and plasma etching. Next, a short pulse of electrochemical current allows the formation of [&hellip;]","og_url":"https:\/\/demo.irdq.ca\/project\/des-points-quantiques-de-silicium-pour-les-memoires-electroniques\/","og_site_name":"IRDQ","article_modified_time":"2021-03-25T21:38:25+00:00","og_image":[{"width":521,"height":557,"url":"https:\/\/demo.irdq.ca\/wp-content\/uploads\/2021\/02\/nanocristal.si_.drouin_cwz.jpg","type":"image\/jpeg"}],"twitter_card":"summary_large_image","twitter_misc":{"Est. reading time":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"WebPage","@id":"https:\/\/demo.irdq.ca\/project\/des-points-quantiques-de-silicium-pour-les-memoires-electroniques\/","url":"https:\/\/demo.irdq.ca\/project\/des-points-quantiques-de-silicium-pour-les-memoires-electroniques\/","name":"SILICON QUANTUM DOTS FOR ELECTRONIC MEMORIES | IRDQ","isPartOf":{"@id":"https:\/\/demo.irdq.ca\/#website"},"primaryImageOfPage":{"@id":"https:\/\/demo.irdq.ca\/project\/des-points-quantiques-de-silicium-pour-les-memoires-electroniques\/#primaryimage"},"image":{"@id":"https:\/\/demo.irdq.ca\/project\/des-points-quantiques-de-silicium-pour-les-memoires-electroniques\/#primaryimage"},"thumbnailUrl":"https:\/\/demo.irdq.ca\/wp-content\/uploads\/2021\/02\/nanocristal.si_.drouin_cwz.jpg","datePublished":"2021-02-26T21:51:05+00:00","dateModified":"2021-03-25T21:38:25+00:00","breadcrumb":{"@id":"https:\/\/demo.irdq.ca\/project\/des-points-quantiques-de-silicium-pour-les-memoires-electroniques\/#breadcrumb"},"inLanguage":"en-US","potentialAction":[{"@type":"ReadAction","target":["https:\/\/demo.irdq.ca\/project\/des-points-quantiques-de-silicium-pour-les-memoires-electroniques\/"]}]},{"@type":"ImageObject","inLanguage":"en-US","@id":"https:\/\/demo.irdq.ca\/project\/des-points-quantiques-de-silicium-pour-les-memoires-electroniques\/#primaryimage","url":"https:\/\/demo.irdq.ca\/wp-content\/uploads\/2021\/02\/nanocristal.si_.drouin_cwz.jpg","contentUrl":"https:\/\/demo.irdq.ca\/wp-content\/uploads\/2021\/02\/nanocristal.si_.drouin_cwz.jpg","width":521,"height":557},{"@type":"BreadcrumbList","@id":"https:\/\/demo.irdq.ca\/project\/des-points-quantiques-de-silicium-pour-les-memoires-electroniques\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Accueil","item":"https:\/\/demo.irdq.ca\/"},{"@type":"ListItem","position":2,"name":"Projets","item":"https:\/\/demo.irdq.ca\/project\/"},{"@type":"ListItem","position":3,"name":"SILICON QUANTUM DOTS FOR ELECTRONIC MEMORIES"}]},{"@type":"WebSite","@id":"https:\/\/demo.irdq.ca\/#website","url":"https:\/\/demo.irdq.ca\/","name":"IRDQ","description":"Infrastructure en recherche et d\u00e9veloppement du Qu\u00e9bec","publisher":{"@id":"https:\/\/demo.irdq.ca\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/demo.irdq.ca\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"en-US"},{"@type":"Organization","@id":"https:\/\/demo.irdq.ca\/#organization","name":"IRDQ","url":"https:\/\/demo.irdq.ca\/","logo":{"@type":"ImageObject","inLanguage":"en-US","@id":"https:\/\/demo.irdq.ca\/#\/schema\/logo\/image\/","url":"https:\/\/demo.irdq.ca\/wp-content\/uploads\/2021\/02\/irdq-logo-vertical.png","contentUrl":"https:\/\/demo.irdq.ca\/wp-content\/uploads\/2021\/02\/irdq-logo-vertical.png","width":1705,"height":683,"caption":"IRDQ"},"image":{"@id":"https:\/\/demo.irdq.ca\/#\/schema\/logo\/image\/"}}]}},"_links":{"self":[{"href":"https:\/\/demo.irdq.ca\/en\/wp-json\/wp\/v2\/project\/1261"}],"collection":[{"href":"https:\/\/demo.irdq.ca\/en\/wp-json\/wp\/v2\/project"}],"about":[{"href":"https:\/\/demo.irdq.ca\/en\/wp-json\/wp\/v2\/types\/project"}],"author":[{"embeddable":true,"href":"https:\/\/demo.irdq.ca\/en\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/demo.irdq.ca\/en\/wp-json\/wp\/v2\/comments?post=1261"}],"version-history":[{"count":2,"href":"https:\/\/demo.irdq.ca\/en\/wp-json\/wp\/v2\/project\/1261\/revisions"}],"predecessor-version":[{"id":1417,"href":"https:\/\/demo.irdq.ca\/en\/wp-json\/wp\/v2\/project\/1261\/revisions\/1417"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/demo.irdq.ca\/en\/wp-json\/wp\/v2\/media\/1262"}],"wp:attachment":[{"href":"https:\/\/demo.irdq.ca\/en\/wp-json\/wp\/v2\/media?parent=1261"}],"wp:term":[{"taxonomy":"project_category","embeddable":true,"href":"https:\/\/demo.irdq.ca\/en\/wp-json\/wp\/v2\/project_category?post=1261"},{"taxonomy":"project_tag","embeddable":true,"href":"https:\/\/demo.irdq.ca\/en\/wp-json\/wp\/v2\/project_tag?post=1261"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}