{"id":954,"date":"2021-02-23T11:08:21","date_gmt":"2021-02-23T16:08:21","guid":{"rendered":"https:\/\/demo.irdq.ca\/produit\/inductively-coupled-plasma-reactive-ion-etcher-icp-rie\/"},"modified":"2021-04-13T16:06:48","modified_gmt":"2021-04-13T20:06:48","slug":"inductively-coupled-plasma-reactive-ion-etcher-icp-rie","status":"publish","type":"product","link":"https:\/\/demo.irdq.ca\/en\/equipements\/inductively-coupled-plasma-reactive-ion-etcher-icp-rie\/","title":{"rendered":"Inductively coupled plasma reactive ion etcher (icp-rie)"},"content":{"rendered":"

Additional information<\/h2>\n\n\n\n\n
MANUFACTURER<\/th>\nOxford Instruments<\/td>\n<\/tr>\n
MODEL<\/th>\nPlasmaLab System 100 – Modular ICP380<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

Samples<\/h3>\n
    \n
  • Photomasks sizes\u00a0: maximum 150 mm (6\u02ee); thickness: maximum 6,35 mm (1\/4\u02ee)<\/li>\n
  • Samples sizes\u00a0: maximum 150 mm (6\u02ee); thickness: maximum 6,35 mm (1\/4\u02ee)<\/li>\n<\/ul>\n

    Available Temperatures and Gases<\/h3>\n
      \n
    • Temperature\u00a0: -150 \u00b0C to 400 \u00b0C<\/li>\n
    • Gases: Cl2<\/sub>, O2<\/sub>, SiCl4<\/sub>, CH4<\/sub>, He, SF6<\/sub>, H2<\/sub>, N2<\/sub>, Ar<\/li>\n<\/ul>\n

      Characteristics<\/h3>\n
        \n
      • High density 380 mm ICP Source (Generator of 2 MHz, 5 kW)<\/li>\n
      • 240 mm lower electrode (13.56 MHz, 600 W) with automatic impedance tuning and variable height<\/li>\n
      • Typical operating pressure: 1 \u2013 100 mTorr<\/li>\n
      • Fast loading via loadlock<\/li>\n
      • Etch end point detection system by laser interferometry<\/li>\n
      • Automated chamber cleaning<\/li>\n
      • Cryogenic platform<\/li>\n<\/ul>\n

         <\/p>\n

        ROUTINE PROCESS<\/h3>\n

        Etch<\/h4>\n

        Metal Etch<\/strong><\/p>\n

          \n
        • Types of metal: Cr, Al<\/li>\n
        • Minimum feature size: 30 nm<\/li>\n
        • Etch masks: SiO2 or resist<\/li>\n
        • Etch rate: about 50 nm\/min<\/li>\n<\/ul>\n

           <\/p>\n

          ROUTINE PROCESS<\/h3>\n

          Etch<\/h4>\n

          III-V Material Etch<\/strong><\/p>\n

            \n
          • Type of material: GaAs, GaN, InGaN<\/li>\n
          • Minimum feature size: 50 nm<\/li>\n
          • Etch masks: SiO2 or resist<\/li>\n
          • Etch rate: about 350-700 nm\/min<\/li>\n<\/ul>\n","protected":false},"excerpt":{"rendered":"

            Additional information MANUFACTURER Oxford Instruments MODEL PlasmaLab System 100 – Modular ICP380 Samples Photomasks sizes\u00a0: maximum 150 mm (6\u02ee); thickness: maximum 6,35 mm (1\/4\u02ee) Samples sizes\u00a0: maximum 150 mm (6\u02ee); thickness: maximum 6,35 mm (1\/4\u02ee) Available Temperatures and Gases Temperature\u00a0: -150 \u00b0C to 400 \u00b0C Gases: Cl2, O2, SiCl4, CH4, He, SF6, H2, N2, Ar […]<\/p>\n","protected":false},"featured_media":939,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_et_pb_use_builder":"","_et_pb_old_content":"","_et_gb_content_width":""},"product_cat":[378,381],"product_tag":[596],"yoast_head":"\nInductively coupled plasma reactive ion etcher (icp-rie) | IRDQ<\/title>\n<meta name=\"robots\" content=\"noindex, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Inductively coupled plasma reactive ion etcher (icp-rie) | IRDQ\" \/>\n<meta property=\"og:description\" content=\"Additional information MANUFACTURER Oxford Instruments MODEL PlasmaLab System 100 – Modular ICP380 Samples Photomasks sizes\u00a0: maximum 150 mm (6\u02ee); 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