Ion Implantation (IMC-200)

Ion Implantation (IMC-200)

Additional information

MANUFACTURER Ion Beam Services
MODEL IMC-200

Samples

  • Samples size : from 5 mm to 150 mm
  • Temperature : -150 °C to 500 °C
  • Accelerating voltage: 1 keV to 200 keV (400 keV for double charge)

Characteristics

  • Implanter Varian CF3000 modified
  • Medium current (up to 1 mA depending on species)
  • Source: gas, solids, liquids (Bernas or Freeman)
  • Angle: 0 to 60 degrees (limit: 100 mm sample)
  • Cassette to cassette system with 100 mm wafers
  • Flood gun to neutralize charges

 

ROUTINE PROCESS

Ion Implantation

  • Material implanted : Ar, N, B, Br, Ca, Co, Sn, F, Ge, H, Mg, Ni, Si
  • Dose : 1.00+14 to 3.00+17
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To use this equipment

The equipment available is accessible to the academic and industrial research community.

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