Inductively coupled plasma reactive ion etcher (icp-drie) Bosch and Cryogenic Processes
Inductively coupled plasma reactive ion etcher (icp-drie) Bosch and Cryogenic Processes
Additional information
| MANUFACTURER | Oxford Instruments |
|---|---|
| MODEL | PlasmaLab System 100 – Modular ICP180 |
Samples
- Samples sizes : maximum 100 mm
- Dedicated to silicon etching
Temperatures and Gases
- Temperature : -150 °C to 400 °C
- Gases: SF6, C4F8, O2
ROUTINE PROCESS
Cryogenic Silicon Etch
- Mask : resist, SiO2, Cr
- Etch rate : 2.5 µm/min
- Selectivity : 75 :1 for positive resist; 150 :1 for SiO2; infinite for Cr
- Reproductibility : ±4%
- Uniformity : ±5% over 4 in
- Profile : 90° ±1°; aspect ratio : up to 30 :1
Bosch Silicon Etch
- Mask : resist, SiO2, Cr
- Etch rate : 2 µm/min
- Selectivity : 75 :1 for positive resist; 150 :1 for SiO2; infinite for Cr
- Reproductibility : ±4%
- Profile : 90° ±1°; aspect ratio : up to 30 :1
To use this equipment
The equipment available is accessible to the academic and industrial research community.
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